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Novel strained superjunction vertical single diffused MOSFET
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DOI：10.1016/j.aeue.2019.152929.png)
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Abstract
En 中文
In this article, a novel strained superjunction vertical single diffused MOSFET is proposed with enhanced current driving capability. In this design strain is induced by using SiGe layer in a superjunction vertical single diffused MOSFET (SJ-VSDMOS) and it improves the device performance. The structure is simulated in Silvaco 2-D device simulator. Proposed device exhibits 30% increase in current driving capability, 6.8% less gate charge is required by the device with improved peak transconductance on comparing with conventional device. Area specific on resistance of the proposed device is reduced by 24%. Hence, proposed device exhibits enhanced electrical behavior compared to conventional device. (C) 2019 Elsevier GmbH. All rights reserved.
Keywords:
VDMOS
SJ-VSDMOS VSDMOS
Strain effect
Hetrojunction
Superjunction
Workfunction
Breakdown voltage
Area specific ON resistance
Gate charge
Transconductance
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