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Optical Amplification and Lasing From Erbium-Doped Single-Crystal Films Epitaxially Grown on Silicon
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DOI：10.1002/lpor.71708.png)
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Abstract
En 中文
On-chip erbium-doped optical amplifiers and lasers are essential for realizing fully integrated active silicon photonic circuits, but their performance has been limited by the low gain in predominantly used amorphous host materials and by the difficulty of direct integration on silicon. Here, we demonstrate optical amplification and lasing from erbium-doped single-crystal gadolinium oxide (Er: Gd 2 O 3 ${\rm Gd}_2{\rm O}_3$ ) thin films epitaxially grown on silicon. Optical gain measurements on waveguides fabricated on this platform exhibit a large material gain of 78.3 ± 2.1 $78.3\pm 2.1$ dB/cm and an on-chip net gain exceeding 13 dB in a 6-mm-long waveguide at 2.3 K, while a measurable gain is maintained up to room temperature. Continuous-wave lasing with low threshold, narrow linewidth, and large side-mode suppression ratio is also demonstrated in Er: Gd 2 O 3 ${\rm Gd}_2{\rm O}_3$ microring resonators. These results establish Er: Gd 2 O 3 ${\rm Gd}_2{\rm O}_3$ as the first monolithic crystalline gain medium directly integrated on silicon, providing a scalable route toward high-performance silicon and quantum photonic integrated circuits.
Keywords:
erbium
gadolinium oxide
lasing
optical amplification
rare-earth oxide
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