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Optically Controlled Terahertz-Wave Modulator on Substrateless Silicon Waveguide
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DOI：10.1109/tthz.2026.3685981.png)
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Abstract
En 中文
A terahertz-wave modulator is a crucial component in achieving high-speed wireless communications and advanced terahertz signal processing. Most previously realized terahertz modulators have primarily focused on wave manipulation in free space, which hardly fulfills the requirements for system-level compactness and miniaturization. This article introduces an optically controlled terahertz modulator on a substrateless silicon platform. This modulator incorporates a dipole resonator and a 1-D photonic crystal cavity to enhance the sensitivity of the terahertz waveguide to optical stimulus, achieving an enhanced modulation depth with a limited optical excitation power. This enabled us to demonstrate a modulation depth of 15.52 dB for the terahertz signal at 275.22 GHz with an optical power of 6.8 mW. While the modulation speed is 74 kHz in this work, which is limited by silicon’s long carrier lifetime, and we anticipate that the modulation frequency can reach gigahertz levels by incorporating a semiconductor with a faster recombination time. The proposed modulator topology holds substantial promise for integration into terahertz systems for wireless communications, where miniaturization, efficiency, and rapid modulation are essential.
Keywords:
Attenuator
photoexcitation
terahertz-wave
silicon devicon
substrateless
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