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Optically Loaded Semiconductor Quantum Memory Register
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DOI：10.1103/PhysRevApplied.5.024014.png)
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Abstract
En 中文
We propose and analyze an optically loaded quantum memory that exploits capacitive coupling between self-assembled quantum-dot molecules and electrically gated quantum-dot molecules. The self-assembled dots are used for spin-photon entanglement, which is transferred to the gated dots for long-term storage or processing via a teleportation process heralded by single-photon detection. We illustrate a device architecture enabling this interaction and outline both its operation and fabrication. We provide self-consistent Poisson-Schrodinger simulations to establish the design viability, to refine the design, and to estimate the physical coupling parameters and their sensitivities to dot placement. The device we propose generates heralded copies of an entangled state between a photonic qubit and a solid-state qubit with a rapid reset time upon failure. The resulting fast rate of entanglement generation is of high utility for heralded quantum networking scenarios involving lossy optical channels.
Keywords:
2-DIMENSIONAL ELECTRON-GAS
TRANSPORT-PROPERTIES
STATE TOMOGRAPHY
KEY DISTRIBUTION
SINGLE PHOTONS
DOT SPIN
ENTANGLEMENT
COMMUNICATION
COMPUTATION
FIELD
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