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Optimized Barrier Layer Enables High-Performance Bismuth Telluride-based Thermoelectric Devices
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DOI：10.1016/j.nanoen.2026.112008.png)
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Abstract
En 中文
• A tailored strategy for optimizing alloy BLs in the bismuth telluride-based TEDs. • High-throughput fabrication and screening of elemental metal BL analogues. • The Ti2.7Al2.3-BL for BTS exhibits excellent thermal, electrical, and mechanical properties. • A high Pmax of 1.10 W and η of 6.02% for the TED integrated with the Ti2.7Al2.3-BL.
Keywords:
Barrier Layer
Bismuth Telluride
Thermoelectric Devices
High-Performance
Alloy Optimization
Journal
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17.1
Papers:
1.1W
Citations:
13.0W
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