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Optimizing spin polarization in quantum dot vertical-gain structures through pump wavelength selection
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DOI：10.1063/5.0261768.png)
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Abstract
En 中文
Spintronic applications require an efficient injection of spin-polarized carriers. We study the maximally achievable spin polarization in InAs quantum dots in a vertical-cavity gain structure to be used in telecoms-wavelength vertical-external-cavity surface-emitting lasers via measurement of the Stokes parameter of the photoluminescence emission around 1290 nm. Using five pump wavelengths between 850 and 1070 nm, the observed spin polarization depends strongly on the pump wavelength with the highest polarization of nearly 5% found for excitation at 980 nm. This corresponds to an effective spin lifetime of 40 ps and is attributed to the dominant excitation of heavy holes only.
Keywords:
RELAXATION
DYNAMICS
ENHANCEMENT
MODULATION
INJECTION
VCSELS
VECSEL
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3.6
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10.4W
Citations:
17.8W
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