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Ordering atoms on weak interaction
DOI:10.1126/science.aek4631.png)
Abstract
En 中文
Next-generation computer logic and memory technologies require high-speed data processing and low power consumption to handle massive data loads and perform real-time artificial intelligence tasks. Meeting these demands involves packing more transistors into a limited chip area while maintaining efficient control of electrical current. However, continued miniaturization of conventional silicon transistors becomes difficult as their dimensions approach the nanometer scale. Two-dimensional (2D) semiconductors—atomically thin materials that bridge conductors and insulators—are promising materials for future transistors (1). They can efficiently transport charge carriers, such as electrons and holes (the counterpart of electrons), and regulate current flow at atomic dimensions. Realizing this potential requires atomically controlled metal contacts that connect 2D semiconductors to external circuits. On page 938 of this issue, Zhang et al. (2) report a stepwise process that grows single-crystal metal contacts on 2D semiconductors. This offers a route to integrate a range of single-crystal materials into devices.

