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Orthorhombic SrVSi2O7 as a potential magnetic second-order topological insulator with spin-polarized hinge states
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DOI：10.3389/fphy.2026.1770329.png)
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Abstract
En 中文
Three-dimensional second-order topological insulators (3D SOTIs) have attracted considerable attention in recent years; however, realistic material realizations to date are overwhelmingly restricted to nonmagnetic systems. In this work, based on first-principles calculations, we demonstrate that bulk SrVSi2O7-an experimentally realized material with an orthorhombic crystal structure-is an intrinsic 3D ferromagnetic SOTI. We find that the nontrivial bulk band gap and the associated fractional topology are exclusively carried by the spin-up channel. For SrVSi2O7, the spin-up channel hosts a quantized fractional topological charge (Q (2) = e/2), whereas the spin-down channel remains topologically trivial (Q (2) = 0). Consistent with the higher-order bulk-boundary correspondence, SrVSi2O7 is confirmed to host topologically protected and ultra-clean hinge states exclusively in the spin-up channel, well isolated from the bulk bands. Distinct from previously reported nonmagnetic 3D SOTIs, the hinge states in SrVSi2O7 are intrinsically spin polarized, highlighting its potential as a platform for topological spintronic applications.
Keywords:
band structural calculation
DFT calculations
hinge state
magnetic SOTI
magnetism
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