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Overcoming the thermo-optic limit in silicon photonics through ferroelastic domain reconfiguration in Barium titanate
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DOI：10.1016/j.nanoen.2026.112306.png)
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Abstract
En 中文
• A novel ferroelastic domain reconfiguration mechanism delivers giant thermo-optic response BTO thin films. • 750 °C-annealed BTO achieves record thermo-optic coefficient of 9.69×10⁻⁴ °C⁻¹,9.69 × 10⁻⁴ °C⁻¹. • Fully reversible a-c domain switching is realized within the practical 25 °C-100 °C on-chip photonic devices. • Prototype Fabry-Pérot modulator reaches 40% modulation depth. • The domain engineering strategy is potentially extendable to CMOS-compatible ferroelectric perovskites.
Keywords:
BaTiO₃ films
Thermo-optic coefficient
Thermo-optic tuning
Domain switching
Thermo-optic modulator
Journal
IF:
17.1
Papers:
1.2W
Citations:
13.0W
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