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Parallel gap resistance soldering based on epitaxial growth: A strategy for achieving intermetallic-free and damage-free micro-joining
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DOI：10.1016/j.ijmachtools.2026.104401.png)
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Abstract
En 中文
• High temperature induced stress concentration by softening substrate, causing semiconductor cracking. • Thermo-mechanical action forms Au-In liquid and drives its flow, resulting in substrate debonding. • The proposed micro-joining method is based on liquid-solid interdiffusion with epitaxial growth. • The strategy enables intermetallic-free, defect-free interfaces and avoids thermo-mechanical damage.
Keywords:
micro-joining
epitaxial growth
intermetallic-free
thermo-mechanical damage
liquid-solid interdiffusion
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