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Parallel Logic Operations in Electrically Tunable Two-Dimensional Homojunctions
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DOI：10.1021/acs.nanolett.4c04337.png)
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Abstract
En 中文
Two-dimensional materials show great potential for future electronics beyond silicon materials. Here, we report an exotic multiple-port device based on multiple electrically tunable planar p-n homojunctions formed in a two-dimensional (2D) ambipolar semiconductor, tungsten diselenide (WSe2). In this device, we prepare multiple gates consisting of a global gate and several local gates, by which electrostatically induced holes and electrons are simultaneously accumulated in a WSe2 channel, and furthermore, at the boundaries, p-n junctions are formed as directly visualized by Kelvin probe force microscopy. Therefore, in addition to the gate voltages in our device, the drain/source bias can also be used to switch the 2D WSe2 channel on/off due to the rectification effect of the formed p-n junctions. More importantly, when the voltage on the global gate electrode is altered, all p-n junctions are affected, which makes it possible to perform parallel logic operations.
Keywords:
2D semiconductor
logic device
p-njunction
encryption
parallel logic operation
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