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Permanent Lithiophilic Layer for Anode-Free Lithium-Hydrogen Gas Battery

delete2025-05-02
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PRE
AI
Y
Yirui Ma
Z
Zaichun Liu
X
Xinhua Zheng
N
Nawab Ali Khan
R
Ruihao Luo
朱正新 cover
朱正新 (Zhengxin Zhu)
Z
Zuodong Zhang
张凯 cover
张凯 (Kai Zhang)
W
Weiping Wang
Y
Yahan Meng
Z
Zehui Xie
T
Touqeer Ahmad
陈巍 cover
陈巍 (Wei Chen)
DOI:10.1002/aenm.202501912delete
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Abstract

Abstract

En 中文
The necessity for high-performance energy storage systems propels extensive research into diverse battery technologies. Among them, the lithium-hydrogen gas (Li//H-2) battery, characterized by high energy density and low cost, is emerging as a promising candidate. Implementing a large areal capacity for the Li metal anode in an anode-free Li//H-2 battery design is essential for achieving higher energy density and further reducing manufacturing costs. Here the study reports a permanent Li-SiOx lithiophilic layer in-situ generated on a Cu substrate during the Li//H-2 battery initial charge that facilitates homogeneous Li nucleation and drives the formation of a dense and thick Li deposition layer. The study manages to maintain the lithiation state to avoid the repetition of lithiation/de-lithiation and significantly reduce the Li nucleation barrier. The anode-free Cu@Li-SiOx//H-2 battery with a high areal capacity of 5 mAh cm(-2) exhibits promising cycling stability with a Coulombic efficiency of up to 99.1% under a current density of 1 mA cm(-2). Moreover, the significantly reduced Li nucleation barrier results in an increased round-trip energy efficiency reaching up to 93.20%. This work proposes a novel strategy for constructing a lithiophilic layer to enhance the practical feasibility of large areal capacity anode-free Li//H-2 batteries.
Keywords:
anode-free
energy storage
Li//H-2 battery
lithiophilic layer
SiOx

Journal

Advanced Energy Materials cover
Advanced Energy Materials
IF:
26
Papers:
1.0W
Citations:
15.7W

Organization

H
Henan Univ Technol
Scholars:
1.2K
Papers: 443
Citations: 153
S
Southeast Univ
Scholars:
5.4K
Papers: 2.5K
Citations: 836