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Phase-Change Memory for In-Memory Computing

delete2025-05-22
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OA
AI
S
Syed Ghazi Sarwat *
M
Manuel Le Gallo
DOI：10.1021/acs.chemrev.4c00670delete
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Abstract

Abstract

En 中文
In-memory computing (IMC) is an emerging computational approach that addresses the processor-memory divide in modern computing systems. The core concept is to leverage the physics of memory devices and their array-level organization to perform computations directly within the memory array. Phase-change memory (PCM) is a leading memory technology being explored for IMC. In this perspective, we review the current state of phase-change materials, PCM device physics, and the design and fabrication of PCM-based IMC chips. We also provide an overview of the application landscape and offer insights into future developments.
Keywords:
THIN-FILMS
RESISTANCE
GE2SB2TE5
NONVOLATILE
MEMRISTOR
CRYSTALLIZATION
RECOGNITION
PLASTICITY
GRAPHENE
MODEL

Journal

Chemical Reviews cover
Chemical Reviews
IF:
55.8
Papers:
558
Citations:
24.7W

Organization

No organization information available