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Phase-sensitive silicon-based total internal reflection sensor

delete2007-01-01
delete24
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OA
AI
S
Sergiy Patskovsky *
M
Michel Meunier
A
Andrei V. Kabashin
DOI：10.1364/OE.15.012523delete
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Abstract

Abstract

En 中文
A concept of phase-sensitive Si-based Total Internal Reflection bio- and chemical sensor is presented. The sensor uses the reflection of light from an internal edge of a Si prism, which is in contact with analyte material changing its index of refraction ( thickness). Changes of the refractive index are monitored by measuring the differential phase shift between p- and s-polarized components of light reflected from the system. We show that due to a high refractive index of Si, such methodology leads to a high sensitivity and dynamic range of measurements. Furthermore, the Si-based platform offers an easy bioimmobilization step and excellent opportunities for the development of multi-channel microsensors taking advantage of the advanced state of development of Si-based microfabrication technologies. (c) 2007 Optical Society of America.
Keywords:
SURFACE-PLASMON RESONANCE
OPTICAL-CONSTANTS
INTERFEROMETER
ELLIPSOMETRY

Journal

Optics Express cover
Optics Express
IF:
3.3
Papers:
6.1W
Citations:
14.3W

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Cited Papers

Cited Papers

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