.png){kind=icon}
.png){kind=icon}
Return
Phase-Transition Devices Based on Organic Mott Insulators
.png){kind=icon}
PRE
AI
DOI：10.1246/bcsj.20210256.png)
.png){kind=icon}
Original request for help.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
Organic Mott-insulators are abundant among molecular conductors and are relevant to many emerging properties such as insulator-to-metal transitions, superconductivity, multiferroics, spin-liquids, and so on. In this review, phase transitions controlled by electric-field-induced carrier doping, strain-induced pressure effect, and light-induced carrier generation observed at a thin film single crystal surface of organic Mott-insulators are described. The control of electronic phases by external stimuli can give rise to a possibility of future application. At the same time, thermodynamic parameters can be tuned by those input signals to determine the system phase diagram, providing basic knowledge indispensable for Mott physics. Therefore, devices made of organic Mott-insulators can contribute to obtaining much information about Mott-transition and associated superconductivity, as well as the feasibility of application in future electronics.
Keywords:
Organic mott insulator
Field effect transistor
Superconducting device
Journal
IF:
3.8
Papers:
9.0K
Citations:
1.1W