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Photodetection properties of MXenes/GeC vertical heterojunctions
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DOI：10.1088/1361-648X/ae1d05.png)
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Abstract
En 中文
Using the first-principles calculations to investigate the photodetection properties of MXenes/GeC (germanium carbide) vertical heterojunctions. The results reveal a type-II band alignment, with Hf2CO2/GeC and GeC/Zr2CO2 exhibiting indirect band gaps of 1.23 eV and 0.85 eV, respectively. Holes localize in GeC, while electrons are found in X2CO2, resulting in a net charge transfer of 0.02 e from GeC to X2CO2, which induces a built-in electric field. These heterostructures demonstrate strong broadband absorption spanning ultraviolet to visible regions. In the case of GeC/Zr2CO2, the photocurrent reaches its maximum value of 651.94 a02/photon at 2.80 eV. For Hf2CO2/GeC, the extinction ratio peaks at 154.73 in the infrared and visible spectra. The maximum hole mobility of Hf2CO2/GeC heterojunction has been measured at 6.90 x 103 cm2 Vs-1 along the zigzag direction. Notably, these two types of heterostructures exhibit potential for high-efficiency optoelectronic devices.
Keywords:
first-principles calculations
GeC
MXenes
carrier mobility
photogalvanic effect (PGE)
Journal
IF:
2.6
Papers:
506
Citations:
5.1W