.png){kind=icon}
.png){kind=icon}
Return
Photoluminescence Spectroscopy Sheds New Light on Silicon Microchip Functional Properties
.png){kind=icon}
OA
AI
DOI：10.1021/acsomega.4c04590.png)
.png){kind=icon}
.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
In this study, we demonstrate that photoluminescence spectroscopy probing local interaction and dynamics at the fundamental level is a versatile tool for testing and evaluation of semiconducting materials as well as microscale chips based on them. Monocrystalline silicon, which is still an undisputed leader among semiconductors in microelectronics, exhibits very low photoluminescence emission additionally shielded by the metallization and passivating layers at the integrated circuit level. To unleash the full potential of photoluminescence spectroscopy for advanced testing and evaluation of the functional properties of the silicon microchips, new essential conceptually built approaches are required that overcome this problem. Here, we report on the first fundamental research-based application of a potentiometric dye to sense the electric field of operational silicon chips. Furthermore, we demonstrate high sensitivity of crystalline silicon phonon-assisted photoluminescence to local temperature in the 27-64 degrees C range. Our results show that sensing and mapping of thermal and electric field distributions using photoluminescence can enable precision testing of the structure, function, operation, and security, not only at the component level but also at the level of the entire integrated circuit.
Keywords:
TEMPERATURE-DEPENDENCE
OPTICAL-PROPERTIES
INTRINSIC SILICON
SOLAR-CELLS
LUMINESCENCE
RECOMBINATION
GAP
AI Summary
Key information extracted from the uploaded paper, including a brief overview, abstract, background, key highlights, visual analysis, and future outlook.
Journal
IF:
4.3
Papers:
3.3W
Citations:
9.8W