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Piezoresistive Modulation in WS₂ Nano-Point Transistors via Piezoelectric Actuation
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DOI：10.1016/j.snr.2026.100477.png)
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Abstract
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• Demonstrates a three-terminal WS₂ nano-tip transistor that combines piezoelectric actuation with piezoresistive sensing to realize voltage–force–current signal transduction beyond conventional field-effect gating. • Develops a reproducible two-step process (electrochemical etching plus dry sulfidation) to fabricate conformal, few-layer WS₂-coated nano-tips that form high-quality W–WS₂ Al point-contact Schottky diodes with rectification ratio ≈103. • Achieves continuous, gate-controlled modulation of drain current with a transconductance of ∼0.35 µA/V over 0–400 V, without current saturation or a sharp threshold, consistent with a pressure-modulated Schottky diode model. • Demonstrates reliable dynamic switching at 0.5 kHz with rise and fall times of ∼4.36 µs and ∼6.02 µs, respectively, and strongly asymmetric propagation delays (tplh ≈ 3.98 µs, tphl ≈ 40.0 µs) that directly evidence electromechanical coupling. • Establishes a mechanically coupled transistor concept that is intrinsically compatible with ultra-low-power operation, strain sensing, and flexible nanoelectronics, opening a pathway toward piezoelectronic device architectures beyond CMOS scaling limits.
Keywords:
piezoelectric–piezoresistive coupling
WS₂ nano-tip
point-contact transistor
Schottky transistor
electromechanical transduction
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