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Polarization-Dimension Competition in Centrosymmetric Flexoelectronic Transistors
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DOI：10.1016/j.mtphys.2026.102121.png)
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Abstract
En 中文
• A unified transport framework is established for centrosymmetric flexoelectronic transistors under nanoscale tip loading. • Current modulation is governed by the competition between flexoelectric-polarization-induced barrier tuning and load-driven contact-size expansion. • Tip-radius engineering suppresses the polarization contribution while enhancing the dimensional effect, providing a practical route to improve strain sensitivity.
Keywords:
flexoelectronic transistors
polarization effect
dimensionality
strain sensitivity
tip-radius engineering
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