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Polyimide-Based High-Temperature Plastic Electronics
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DOI：10.1021/acsmaterialslett.9b00120.png)
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Abstract
En 中文
All-plastic transistor devices with thermal stability up to 220 degrees C are demonstrated. We employ polyimide substrates, polyimide dielectrics, and a polyimide-based semiconducting blend to achieve flexible and thermally-robust transistors. An in situ temperature-dependent charge transport study was used to demonstrate that these devices can operate in extremely high temperatures and can sustain prolonged baking. Our devices maintained stable charge-transport characteristics with charge mobilities of 0.20 cm(2)/(V s), I-ON/T-OFF of 10(4), threshold voltage of 3 V, and operational voltage of 10 V when baked at 195 degrees C for 2 h.
Keywords:
ORGANIC TRANSISTORS
CHARGE-TRANSPORT
FILMS
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