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Polypyridinophane Thin Films via CVD process for Polymeric Dielectric Layer on Oxide TFT with Ultrahigh Dielectric Constant
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DOI：10.1039/D6NH00093B.png)
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Abstract
En 中文
High-k polymer gate dielectrics are desirable for oxide thin-film transistors but limited by low capacitance and interfacial instability. Here; pyridinophane-based polymers with main-chain heteroatoms are processed via a Gorham-type chemical vapor polymerization to form ultrathin; pinhole-free dielectrics with enhanced dielectric properties and reliable oxide transistor performance.
Keywords:
pyridinophane
polymer dielectric
oxide TFT
CVD process
high-k material
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