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Positive and negative photoconductivity coexist in two-dimensional ternary SnSSe alloy
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DOI：10.1016/j.nantod.2026.103118.png)
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Abstract
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• Ternary 2D alloy SnSSe (Sn:S:Se = 1:1:1) combines dichalcogenide properties and tunability, addressing doping limits. • SnSSe FETs reach a maximum carrier mobility of 2.84 cm² V⁻¹ s⁻¹, demonstrating competitive electronic performance. • The broadband photoresponse reaches 100 A/W at 460 nm and remains substantial in the NIR, with a peak of 2.85 A/W at 860 nm. • Wavelength-dependent positive photoconduction and broadband negative photoconductivity are observed from 460 to 1000 nm. • A phenomenological model attributes the optoelectronic response to SnSSe–substrate interactions and light-induced gating.
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