.png){kind=icon}
.png){kind=icon}
Return
Prediction of group-IV multiferroic films with giant mid-infrared responsivity
.png){kind=icon}
PRE
AI
L
Z
X
L
C
Y
W
Q
H
DOI：10.1039/d6tc00889e.png)
.png){kind=icon}
Original request for help.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
Achieving ferroelectric (FE) polarization in two-dimensional (2D) group-IV materials has been a long-sought objective, owing to their significant potential in next-generation Si-based non-volatile logic and memory devices. Here, we demonstrate that atomic rearrangements at the crystallographic planes of group-IV materials can reconstruct the local coordination environment, thereby inducing FE polarization in the resulting thin films. We identify 14 previously unreported 2D phases of group-IV films, with the (111)-derived Pmc21 phase exhibiting the lowest energy among all known group-IV 2D structures. Moreover, its monolayer can be readily exfoliated due to the low exfoliation energy, comparable to experimentally accessible 2D materials. These group-IV films display multiferroic ordering and diverse electronic functionalities, including low switching barriers, ultrahigh electron mobility, and strongly polarization-selective absorption and mid-wavelength infrared responsivity spanning the full 3-5 & micro;m window. Importantly, the multiferroic transition allows interconversion among six symmetry-equivalent FE variants, offering a non-volatile approach for reconfiguring the orientation-dependent, polarization-selective optical transitions via ferroic switching. Our findings provide valuable insights into the FE mechanism in group-IV films, opening new avenues for the design and discovery of IV-based FE devices, and advancing the understanding of the rich physics in tetrahedral semiconductors.
Keywords:
QUANTUM CONFINEMENT
SILICON
FERROELECTRICITY
Journal
IF:
5.1
Papers:
2.0W
Citations:
8.0W
Organization
Cited Papers