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Preparation and Enhancement of Optoelectrical Properties of Poly(3-hexylthiophene-2,5-diyl) Flexible Transistor Inclusion with Molybdenum Disulfide
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DOI：10.1007/s11664-026-12798-x.png)
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Abstract
En 中文
The aim of this research is to fabricate and analyze enhancements in the optoelectrical properties of a flexible poly(3-hexylthiophene) (P3HT) transistor with the inclusion of different concentrations of molybdenum disulfide (MoS2). The films were fabricated via the spin-coating technique followed by thermal annealing to remove the internal stress and increase the concentration. The fabricated transistor included polyimide (PI) as the transistor substrate, poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) as a gate electrode, polymethyl methacrylate (PMMA) as the transistor dielectric layer, and copper (Cu) material for drain contact. Different compositions of the P3HT/MoS2 active layer were examined for optimized performance. The results showed that optimal performance was achieved with the P3HT/1 wt.% MoS2 composition, exhibiting a drain current of 4.5 & times; 10-6 A, an on/off ratio of 103, and a threshold voltage of -2.1 V. The optical analyses revealed enhanced photocurrent (1.94 & micro;A), responsivity (0.92), and external quantum efficiency (EQE) of 74.6%. Thus, the present paper addressed the literature gap and improved the optoelectrical properties of P3HT-based flexible transistors with the addition of MoS2, making it a promising material for high-performance flexible device applications.
Keywords:
Flexible transistor
inclusion
molybdenum disulfide
optoelectrical properties
poly(3-hexylthiophene-2,5-diyl)
spin coating
Journal
J
IF:
2.5
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485
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0
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