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Programmable 2H-MoTe2 FGFET-Based CMOS Array
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DOI：10.1021/acs.nanolett.4c06640.png)
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Abstract
En 中文
A programmable 2H-MoTe2 floating-gate field-effect transistor (FGFET)-based complementary metal oxide semiconductor (CMOS) array has been fabricated on the grown substrate. Coplanar grown metallic 1T '-MoTe2 serves as the source and drain electrodes. The conductive type of the 2H-MoTe2 channel is manipulated by a top-gate engineering method. A typical FGFET-based CMOS device has a memory window as large as similar to 10.6 V and power consumption as low as 0.39 nW. The threshold voltage and output voltage of the device can be modulated by programming voltage pulses. Various stable and reproducible logic functions are implemented. The CMOS array has a high device yield of 90%. We attribute our achievement to the high-quality CVD-grown large-scale 2H/1T '-MoTe2 coplanar heterostructure, the novel method for p/n-type conversion of 2H-MoTe2, and the reliable device process that is compatible with the silicon-based process. This innovative integration of memory and CMOS opens a way to realizing energy-efficient logic-in-memory circuits based on two-dimensional transition metal dichalcogenides.
Keywords:
CMOS
MoTe2
FGFET
TMDCs
coplanar heterostructure
Journal
IF:
9.1
Papers:
2.7W
Citations:
16.5W