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Programmable graded doping for reconfigurable molybdenum ditelluride devices
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DOI：10.1038/s41928-023-01056-1.png)
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Abstract
En 中文
Non-volatile reconfigurable devices have the potential to improve integration levels and lower power consumption in next-generation electronics. Two-dimensional semiconductors are promising materials for making non-volatile reconfigurable devices due to their atomic thinness and strong gate control, but it is challenging to create varied reconfigurable functions with a simple device configuration. Here we show that an effective-gate-voltage-programmed graded-doping strategy can be used to create a single-gate two-dimensional molybdenum ditelluride device with multiple reconfigurable functions. The device can be programmed to function as a polarity-switchable diode, memory, in-memory Boolean logic gates and artificial synapses with homosynaptic plasticity and heterosynaptic plasticity. As a diode, the device exhibits a rectification ratio of up to 104; as an artificial heterosynapse, it shows heterosynaptic metaplasticity with a modulatory power consumption that can be reduced to 7.3 fW. An effective-gate-voltage-programmed graded-doping method can be used to reconfigure a single-gate molybdenum ditelluride device to different states, including a polarity-switchable diode, memory, Boolean logic and artificial synapse.
Keywords:
PLASTICITY
MEMTRANSISTORS
TRANSISTORS
MODULATION
MECHANISMS
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