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Programmable quantum emitter formation in silicon
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DOI：10.1038/s41467-024-48714-2.png)
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Abstract
En 中文
Silicon-based quantum emitters are candidates for large-scale qubit integration due to their single-photon emission properties and potential for spin-photon interfaces with long spin coherence times. Here, we demonstrate local writing and erasing of selected light-emitting defects using femtosecond laser pulses in combination with hydrogen-based defect activation and passivation at a single center level. By choosing forming gas (N2/H2) during thermal annealing of carbon-implanted silicon, we can select the formation of a series of hydrogen and carbon-related quantum emitters, including T and Ci centers while passivating the more common G-centers. The Ci center is a telecom S-band emitter with promising optical and spin properties that consists of a single interstitial carbon atom in the silicon lattice. Density functional theory calculations show that the Ci center brightness is enhanced by several orders of magnitude in the presence of hydrogen. Fs-laser pulses locally affect the passivation or activation of quantum emitters with hydrogen for programmable formation of selected quantum emitters. Quantum emitters in Si show promise for applications in quantum information processing and communication due to their potential as spin-photon interfaces. Jhuria et al. report the formation of selected telecom emitters in Si using local writing and erasing by fs laser pulses and annealing in a hydrogen atmosphere.
Keywords:
INTERSTITIAL CARBON
DEFECTS
HYDROGEN
CENTERS
DIAMOND
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