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Pseudospin-electric coupling for holes beyond the envelope-function approximation
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DOI：10.1103/PhysRevB.102.075310.png)
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Abstract
En 中文
In the envelope-function approximation, interband transitions produced by electric fields are neglected. However, electric fields may lead to a spatially local (k-independent) coupling of band (internal, pseudospin) degrees of freedom. Such a coupling exists between heavy-hole and light-hole (pseudo)spin states in III-V semiconductors, such as GaAs, or in group IV semiconductors (germanium, silicon, ...) with broken inversion symmetry. Here, we calculate the electric-dipole (pseudospin-electric) coupling for holes in GaAs from first principles. We find a transition dipole of 0.5 debye, a significant fraction of that for the hydrogen-atom 1s -> 2p transition. In addition, we derive the Dresselhaus spin-orbit coupling that is generated by this transition dipole for heavy holes in an asymmetric quantum well. A quantitative microscopic description of this pseudospin-electric coupling may be important for understanding the origin of spin splitting in quantum wells, spin coherence/relaxation (T-2*/T-1) times, spin-electric coupling for cavity-QED, electric-dipole spin resonance, and spin nonconserving tunneling in double quantum dot systems.
Keywords:
EFFECTIVE MASSES
SPIN
GAAS
SUBBANDS
PARAMETERS
RESONANCE
MATRIX
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