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Pushing Bilayer Graphene on 4H-SiC(0001) toward Charge Neutrality by Laser Annealing
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DOI：10.1016/j.carbon.2026.121656.png)
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Abstract
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• Laser-induced growth on Si-terminated SiC enables bilayer graphene with substantially reduced electron doping. • ARPES reveals a Dirac point much closer to the Fermi level, indicating a modified low-energy electronic structure. • LEED shows the absence of the long-range ordered (6√3 × 6√3)R30° buffer-layer reconstruction.
Keywords:
Bilayer graphene
Laser annealing
SiC(0001)
Charge neutrality
ARPES
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11.6
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2.0W
Citations:
10.5W
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