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Quantitative scanning capacitance microscopy on single subsurface InAs quantum dots
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DOI：10.1063/1.2885087.png)
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Abstract
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Quantitative scanning capacitance microscopy on InAs quantum dots requires low modulation frequencies and complete darkness. Using a modified feedback method on our atomic force microscope, which allows to switch off the laser temporarily while the feedback loop keeps running, images of buried InAs self assembled quantum dots were acquired. The dots are clearly visible as bright areas in a contrast-rich capacitance landscape, which we attribute to thickness variations of the InAs wetting layer. Even at room temperature, spectroscopic data recorded at on-dot and off-dot positions exhibit a completely different behavior and show evidence of quantized states inside the dots.(C) 2008 American Institute of Physics.
Keywords:
SPECTROSCOPY
GAAS
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