.png){kind=icon}
.png){kind=icon}
Return
Quantum Dots Facilitate 3D Two-Photon Laser Lithography
.png){kind=icon}
OA
AI
DOI：10.1002/adma.202211702.png)
.png){kind=icon}
.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
In the past two decades, direct laser writing (DLW) technologies have seen tremendous growth. However, strategies that enhance the printing resolution and the development of printing material with assorted functionalities are still sparser than expected. Herein, a cost-effective method to tackle this bottleneck is presented. Semiconductor quantum dots (QDs) are selected to carry out this task, most importantly via surface chemistry modification to enable their copolymerization with themonomers, resulting in transparent composites. The evaluations indicate that the QDs show great colloidal stability and their photoluminescent properties are well-preserved. This allows further exploration of the printing characteristics of such composite material. It is shown that in the presence of the QDs, the material provides a much lower polymerization threshold with faster linewidth growth, indicating that the QDs form a synergetic relationship with the monomer and the photoinitiator, widening the dynamic range of the material and thus increasing the writing efficiency for broader fields of applications. Lowering the polymerization threshold reduces the minimum achievable feature size by approximate to 32%, which is well-matched with STED-based (i.e., stimulated-emission depletion microscopy) methods in writing 3D structures. The study further elucidates the mechanism of the synergetic behavior, further guiding the future development of functional materials for DLW-related printing technologies.
Keywords:
3D printing
direct laser writing
InP-based quantum dots
ligand exchange
surface chemistry
two-photon polymerization
AI Summary
Key information extracted from the uploaded paper, including a brief overview, abstract, background, key highlights, visual analysis, and future outlook.
Journal
IF:
26.8
Papers:
3.4W
Citations:
46.0W