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Quest for p-Type Two-Dimensional Semiconductors

delete2019-11-01
delete93
PRE
AI
Q
Qiyuan He
刘源 (Yuan Liu)
谭超良 (Chaoliang Tan)
W
Wei Zhai
G
Gwang‐Hyeon Nam
仉华 cover
仉华 (Hua Zhang) *
DOI:10.1021/acsnano.9b07618delete
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Abstract

Abstract

En 中文
Two-dimensional (2D) semiconductors have demonstrated great potential in modern nanotechnologies across a variety of research fields, including (opto-)electronics, spintronics, and electro-/photocatalysis. Interestingly, the vast majority of 2D semiconductors, such as the widely explored transition-metal dichalcogenides, are n-type or ambipolar. The search for p-type 2D semiconductors in the past decade has succeeded in identifying only a few promising candidate materials. In this Perspective, we discuss various strategies to obtain p-type conduction in normally n-type or ambipolar 2D semiconductors and, more importantly, the direct synthesis of p-type 2D semiconductors such as black phosphorus, 2D tellurium, and, most recently, alpha-MnS.
Keywords:
FIELD-EFFECT TRANSISTORS
BLACK PHOSPHORUS
MOS2
DIODES
WSE2
GRAPHENE
RESISTANCE
NANOSHEETS
CONTACT
LOGIC
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Journal

ACS Nano cover
ACS Nano
IF:
16
Papers:
2.6W
Citations:
25.6W

Organization

N
Nanyang Technological University
Scholars:
4.9W
Papers: 4.8W
Citations: 8.1W
C
City University of Hong Kong
Scholars:
2.3W
Papers: 3.0W
Citations: 6.1W
H
hunan university
Scholars:
4.5W
Papers: 3.3W
Citations: 70
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