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Radiation Resilient Two-Dimensional Electronics
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DOI：10.1021/acsami.3c02406.png)
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Abstract
En 中文
Limitations in cloud-based computinghave prompted a paradigm shifttoward all-in-one edge devices capable of independentdata sensing, computing, and storage. Advanced defense and space applicationsstand to benefit immensely from this due to their need for continualoperation in areas where maintaining remote oversight is difficult.However, the extreme environments relevant to these applications necessitaterigorous testing of technologies, with a common requirement beinghardness to ionizing radiation. Two-dimensional (2D) molybdenum disulfide(MoS2) has been noted to enable the sensing, storage, andlogic capabilities necessary for all-in-one edge devices. Despitethis, the investigation of ionizing radiation effects in MoS2-based devices remains incomplete. In particular, studies on gammaradiation effects in MoS2 have been largely limited tostandalone films, with few device investigations; to the best of ourknowledge, no explorations have been made into gamma radiation effectson the sensing and memory capabilities of MoS2-based devices.In this work, we have used a statistical approach to study high-dose(1 Mrad) gamma radiation effects on photosensitive and programmablememtransistors fabricated from large-area monolayer MoS2. Memtransistors were divided into separate groups to ensure accurateextraction of device characteristics pertaining to baseline performance,sensing, and memory before and after irradiation. All-MoS2 logic gates were also assessed to determine the gamma irradiationimpact on logic implementation. Our findings show that the multiplefunctionalities of MoS2 memtransistors are not severelyimpacted by gamma irradiation even without dedicated shielding/mitigationtechniques. We believe that these results serve as a foundation formore application-oriented studies going forward.
Keywords:
two-dimensional (2D)materials
transition metal dichalcogenides(TMDCs)
MoS2
memtransistors
logic gates
all-in-one integration
radiationhardness
gamma radiation
Journal
IF:
8.2
Papers:
6.1W
Citations:
38.7W
Organization
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