.png){kind=icon}
.png){kind=icon}
Return
Radio-Frequency Capacitive Gate-Based Sensing
.png){kind=icon}
OA
AI
DOI：10.1103/PhysRevApplied.10.014018.png)
.png){kind=icon}
.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
Developing fast, accurate, and scalable techniques for quantum-state readout is an active area in semiconductor-based quantum computing. Here, we present results on dispersive sensing of silicon corner state quantum dots coupled to lumped-element electrical resonators via the gate. The gate capacitance of the quantum device is placed in parallel with a superconducting spiral inductor resulting in resonators with loaded Q factors in the 400-800 range. We utilize resonators operating at 330 and 616 MHz, and achieve charge sensitivities of 7.7 and 1.3 mu e/root Hz, respectively. We perform a parametric study of the resonator to reveal its optimal operation points and perform a circuit analysis to determine the best resonator design. The results place gate-based sensing on a par with the best reported radio-frequency single-electron transistor sensitivities while providing a fast and compact method for quantum-state readout.
Keywords:
SINGLE-ELECTRON TRANSISTOR
FIELD-EFFECT TRANSISTOR
CIRCUIT QUANTUM ELECTRODYNAMICS
SPIN QUBIT
SILICON
DOT
FIDELITY
COHERENCE
READOUT
PHOTON
AI Summary
Key information extracted from the uploaded paper, including a brief overview, abstract, background, key highlights, visual analysis, and future outlook.
Journal
IF:
4.4
Papers:
7.1K
Citations:
2.8W
View more organizations