.png){kind=icon}
.png){kind=icon}
Return
Random pn-junctions for physical cryptography
.png){kind=icon}
PRE
AI
DOI：10.1063/1.3396186.png)
.png){kind=icon}
Original request for help.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
In this paper, we report on high-rectification pn-diodes (rectification ratios up to 2x10(7)) prepared by aluminum-induced crystallization on crystalline Si-wafers, which exhibit highly random I(V) characteristics. We argue that arrays of such diodes can be employed as physical uncloneable functions for cryptography. To resolve the structure of the active diode area, focused-ion beam imaging was used. The I(V) curves of the diodes reveal that both a smaller polycrystalline silicon film thickness and a smaller diode size lead to increasing randomness due to the increasing inhomogeneity of thinner films and due to more pronounced grain boundary effects for smaller diodes.
Keywords:
aluminium
cryptography
crystal growth
crystallisation
elemental semiconductors
grain boundaries
p-n junctions
random processes
rectification
semiconductor diodes
semiconductor growth
semiconductor thin films
semiconductor-metal boundaries
silicon
AI Summary
Key information extracted from the uploaded paper, including a brief overview, abstract, background, key highlights, visual analysis, and future outlook.
Journal
IF:
3.6
Papers:
10.4W
Citations:
17.8W