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Realizing a p-type conductivity transition in Bi2Te3 thin films via PbZr0.52Ti0.48O3 substrate-mediated antisite defect regulation
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DOI：10.1007/s10853-026-13157-1.png)
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Abstract
En 中文
Bismuth telluride (Bi2Te3, BT) is one of the most widely used room-temperature thermoelectric materials. Its intrinsic point defects play a key role in determining the conductivity type and carrier transport properties, yet also make precise performance tuning challenging. To achieve conductivity type regulation without chemical doping, this study investigates Bi2Te3 thin films controlled by substrate–film interface interactions. Films were grown on diverse substrates via spin-coating co-reduction, using the substrate properties to modulate microstructure and defect states, and the effects on thermoelectric properties were evaluated. Results demonstrate that substrate crystal structure and interfacial chemical environment can effectively govern film microstructure. In particular, films grown on lead zirconate titanate (PbZr0.52Ti0.48O3, PZT) substrates exhibit a distinct (1016) preferred orientation, induced by lattice matching between the film and substrate. More importantly, the coordination environment on the PZT substrate surface promotes the formation of BiTe antisite defects, which provide hole carriers and alter electron transport behavior. As a result, a transition from n-type to p-type conductivity is achieved without altering the stoichiometry of the film. This study demonstrates a method for regulating antisite defects through substrate interface engineering, enabling on-demand switching of film conductivity by controlling interface-induced defect structures. These findings offer a new strategy for the structural design of future high-performance thermoelectric thin-film devices.
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