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Recent Advances in Electron-doping of Quantum Dots: Synthesis, Optical Properties, and Optoelectronic Applications
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DOI：10.1007/s40242-026-6133-x.png)
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Abstract
En 中文
Stably and controllably doping free carriers, here specifically free electrons, into colloidal quantum dots (QDs) is central to realizing their size-tunable optical and optoelectronic properties. Unlike bulk semiconductors, aliovalent atomic doping in QDs is challenging due to self-purification mechanism. This mini-review focuses on recent advances in one type of unique doping strategies for QDs (i.e., remote electron-doping into their quantum-confined conduction band), including chemical, electrochemical, and photochemical approaches. We discuss optical properties, many-body interactions, and Fermi-level shifts of n-doped QDs. Impacts of n-doping on low-threshold optical gain, infrared intraband emission and detection, and charge-transport layers in devices are discussed.
Keywords:
Quantum dot
Electron doping
Optoelectronics
Journal
IF:
3
Papers:
2.9K
Citations:
2.8K
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Cited Papers