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Reconfigurable Memristive Device Technologies
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DOI：10.1109/JPROC.2015.2441752.png)
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Abstract
En 中文
In this paper, we present a review of the state of the art in memristor technologies. Along with ionic conducting devices [i.e., conductive bridging random access memory (CBRAM)], we include phase change, and organic/organo-metallic technologies, and we review the most recent advances in oxide-based memristor technologies. We present progress on 3-D integration techniques, and we discuss the behavior of more mature memristive technologies in extreme environments.
Keywords:
Memristor
radiation effects
ReRAM
3-D integration
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