.png){kind=icon}
.png){kind=icon}
Return
Relation Between Interface Defects and Bonding Void Sizes
.png){kind=icon}
PRE
AI
DOI：10.1149/2162-8777/ae4066.png)
.png){kind=icon}
Original request for help.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
The presence of particles at a bonding interface is responsible for unbonded areas. In this paper we relate the unbonded area to the characteristics of the defects (height and diameter). This analytic expression is derived from elastic energy calculations based on classical point force and flat punch models. The results from the analytic formula are compared to finite element modeling calculations using J-integrals, with different experimental input parameters. Bonding energies of a series of samples with controlled defects are then obtained consistently using both methods.
Keywords:
wafer bonding
elasticity
defect
flat punch
adhesion
surface energy
Journal
IF:
2.2
Papers:
266
Citations:
7.8K