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Resilience via Recovery: Gamma-Irradiated Cascode GaN HEMTs Under Electron Wind Force
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DOI：10.1109/TDMR.2025.3642776.png)
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Abstract
En 中文
Thermal annealing of radiation-induced degradation, especially at lower temperatures, requires an impractically long duration. This study investigates the efficacy of room-temperature electron wind force (EWF) annealing as a post-irradiation recovery treatment. Cascode GaN high-electron-mobility transistors (HEMTs) were exposed to gamma radiation doses of up to 10 Mrad-approximately 10 times higher than the average reported in the literature-resulting in significant degradation of their output and transfer characteristics. Our non-thermal annealing process appreciably mitigated radiation-induced damage within minutes. In contrast, similar studies in the literature required orders of magnitude more time and/or higher temperatures, even for lower doses ( <= 500 Krad). These findings highlight the potential of EWF annealing as an in-operando treatment to enhance the resilience of GaN devices in radiation-intensive environments.
Keywords:
Annealing
Threshold voltage
HEMTs
MODFETs
Electrons
Force
Gallium nitride
Degradation
Performance evaluation
Silicon
High-electron-mobility transistors (HEMTs)
GaN HEMTs
non-thermal annealing
radiation effects
semiconductor reliability
threshold voltage shift
defect recovery
electron wind force (EWF) annealing
gamma irradiation
Journal
I
IF:
2.3
Papers:
84
Citations:
2.6K
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