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Review on ultrathin-barrier AlGaN(<6 nm)/GaN enhancement-mode technology: concept; device fabrication; and integration prospects
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DOI：10.1088/1361-6463/ae634c.png)
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Abstract
En 中文
With the growing demand for high-efficiency, highly integrated, and highly reliable devices in power electronics and radio frequency (RF) systems, gallium nitride (GaN)-based high electron mobility transistors (HEMTs) technology has advanced rapidly. Traditional enhancement-mode (E-mode) GaN devices typically rely on processes such as gate trench etching, fluoride ion implantation, or p-GaN gates, which suffer from poor etch uniformity, threshold voltage instability, and low yield rates. The ultrathin barrier (UTB) AlGaN/GaN heterostructure, owing to its inherent depletion of the two-dimensional electron gas, has emerged as an ideal platform for realizing trenchless E-mode devices. This paper systematically reviews the current development status of UTB AlGaN/GaN E-mode metal-insulator-semiconductor-HEMT technology, focusing on its operating principles, key processes (such as low-resistance ohmic contacts and high-reliability gate dielectrics), device performance enhancements (including power and RF performance), and its application prospects in E/D-mode co-integration and RF-power synergistic integration. The article concludes by discussing the challenges UTB technology faces during large-scale industrialization, such as interface defect control, wafer-level uniformity, and thermal management, while also proposing potential solutions and prospects. The UTB GaN technology provides a robust foundation for realizing high-performance, highly uniform, and CMOS-compatible GaN power and RF system-on-chip solutions.
Keywords:
ultrathin-barrier
AlGaN/GaN
enhancement-mode
HEMT
integration prospects
Journal
J
IF:
3.2
Papers:
726
Citations:
0
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Cited Papers