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Robust Numerical Solver for Nonlinear Semiconductor Problems
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AI
DOI：10.1109/TMTT.2025.3576061.png)
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Abstract
En 中文
In this work, we develop a numerical solver, efficiently and robustly treating highly nonlinear semiconductor device problems. Beyond the capabilities of commercial tools, the solver can compute the time-domain capacitance and the spectrum of the device current. The solver is based on the finite element method (FEM) and employs the successive under-relaxation scheme. Its capability has been assessed and validated in a study of an axisymmetric metal-oxide-semiconductor (MOS) structure, presenting an archetypal scanning microwave microscopy (SMM) calibration sample, with both n- and p-doped semiconductors, including different excitation sources. Excellent agreement was obtained, when testing the tool against features of a commercial tool. By computing the capacitance for the applied low-frequency (LF) bias, combined with a high-frequency (HF) probe signal, the spectrum of the current flowing in the structure was evaluated, revealing mix-product components. This allowed us to verify the solver against measurements, resulting in a very good agreement.
Keywords:
Silicon
Finite element analysis
Substrates
Silicon dioxide
Semiconductor device modeling
Geometry
Voltage
Semiconductor device measurement
Scanning microwave microscopy
Poisson equations
Drift-diffusion model (DDM)
finite element method (FEM)
scanning microwave microscopy (SMM)
semiconductor
Journal
IF:
4.5
Papers:
593
Citations:
3.5W