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Robust Out-of-Plane Ferroelectricity in Aurivillius Ultrathin Films through Local Chemical Antisite
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PRE
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J
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DOI：10.1016/j.actamat.2026.122634.png)
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Abstract
En 中文
Layered Aurivillius-phase ferroelectric thin films exhibit excellent fatigue endurance, attracting significant interest for non-volatile memory applications. However, their spontaneous polarization restricts use in modern vertical architectures. This study utilizes three-layer Aurivillius-phase Bi4Ti3O12 as a model system. A chemical solution method with non-stoichiometric modulation enables the controlled introduction of localized antisite transformations between B-site (Ti4+) and A-site (Bi3+) ions. Bi ions occupying Ti sites eliminate perovskite units, disrupting antipolar ordering and remarkably enhancing out-of-plane ferroelectricity. Polarization vector analysis, piezoresponse force microscopy (PFM), and P–E hysteresis loop measurements confirm the enhanced out-of-plane polarization. The antisite-modified Bi4Ti3O12 films exhibit well-defined ferroelectric domains and a remnant polarization (Pr) of ∼2.2 μC/cm2, representing a 7.8-fold enhancement. Density functional theory (DFT) calculations reveal that oxygen vacancies are critical for maintaining insulating properties and ferroelectric polarization in Bi4Ti3O12 with antisite transformations. This work demonstrates a novel strategy for controlling ferroelectric orientation in layered oxides via local chemical antisite engineering, providing valuable insights for designing out-of-plane polarized films for next-generation high-performance memory devices.
Keywords:
Aurivillius Oxide Films
antisites
out-of-plane ferroelectricity
Journal
IF:
9.3
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2.0W
Citations:
12.9W
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