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Robust single-electron memory with quantum states manipulation
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DOI：10.1126/science.aeg6638.png)
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Abstract
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Realizing stable and distinguishable quantum memory at the single-electron level has long been challenged by increased parasitic gate-channel fringe capacitance, which substantially lowers the threshold voltage shift (ΔVth) caused by stored electrons as device dimensions are scaled down. Using atomically thin two-dimensional materials and edge-contacted metal electrodes, Liu et al. designed a coplanar drain channel source structure that enabled a nonvolatile ΔVth of 0.5 volts at room temperature. Their work demonstrates the ability to control single-electron quantum behavior, offering promising prospects for nanoscale memory device engineering. —Yury Suleymanov