Satisfiability Attack-Resilient Camouflaged Multiple Multivariable Logic-in-Memory Exploiting 3D NAND Flash Array

doi:10.1109/TCSI.2023.3326332

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Satisfiability Attack-Resilient Camouflaged Multiple Multivariable Logic-in-Memory Exploiting 3D NAND Flash Array

2024-02-01

Bhogi Satya Swaroop

Ayush Saxena

Shubham Sahay *

DOI：10.1109/TCSI.2023.3326332

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Abstract

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Logic-in-memory implementations have attracted significant attention recently for energy efficient in-situ processing of big data in this era of IoT. However, the emerging memory technologies such as RRAMs, PCMs, STT-MRAMs, etc. are still immature and exhibit significant spatial and temporal variations limiting the yield and the size of crossbar arrays available for implementing logic functions. Considering the technological maturity, ultra-high density and ultra-low cost of 3D NAND flash memory, in this work, we have proposed a novel methodology to exploit 3D NAND flash memory for realizing any logic function in sum-of-product form (SOP) with <= 177 literals/inputs and <= 2(14) minterms parallelly. Moreover, all the logic functions realized using the proposed technique appear same at the layout level rendering the logic-in-memory implementation utilizing the 3D NAND flash memory an innate camouflaging property and an inherent immunity against security vulnerabilities in the semiconductor supply chain. We have also evaluated the resiliency of the proposed technique against reverse engineering attacks such as SAT attacks, ATPG attacks and brute force attacks on ISCAS'85 and ISCAS'89 benchmark circuits. Our results indicate that the proposed logic-in-memory implementation facilitates complete obfuscation of the logic function without introducing any area overhead and exhibits a strong resiliency against reverse engineering.

Keywords:

3D NAND flash

logic-in-memory

reverse engineering

IC camouflaging

SAT attack