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Scalable fabrication of SiOx films for optical applications by HC-PECVD
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DOI：10.1016/j.vacuum.2026.115586.png)
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Abstract
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Low-temperature Hollow Cathode Plasma-Enhanced Chemical Vapor Deposition (HC-PECVD) allows fabrication of uniform films at a relatively high deposition rate compared with Physical Vapor Deposition (PVD). The method is scalable, highlighting its strong potential for large-area industrial applications. Our study explores the deposition of SiO2 thin films by HC-PECVD on glass substrates using 1,1,3,3, Tetramethyldisiloxane (TMDSO) as a source of silica. Although TMDSO tends to produce carbon-rich SiOxCy films, the stoichiometry of SiOx was precisely tuned by varying the power (3 kW and 6 kW), oxygen flow rate and working pressure, allowing for a comprehensive investigation of how process parameters affect the film properties. Grazing incidence X-Ray Diffraction (XRD) confirmed the amorphous nature of the coating, whereas X-ray Photoelectron Spectroscopy (XPS) revealed the formation of stoichiometric SiO2. UV-Vis spectroscopy showed a high transmittance. Water contact angle measurements showed that near-stoichiometric silica films were more hydrophilic (∼41°) than sub-stoichiometric silica films (∼85°). Scratch and cross-cut tests confirmed good adhesion with the glass substrates at high deposition power. The results demonstrated that low-temperature HC-PECVD using a TMDSO precursor enabled precise tuning of SiOx film properties through controlled oxygen plasma conditions, offering robust and highly transparent coatings for advanced optical applications.
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