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Scalable synthesis of semiconducting MoB2 nanosheets for flexible and multifunctional UV–Vis photodetection

delete2025-11-09
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PRE
AI
M
Mizna Naseem
M
Muhammad Tahir *
J
Jun Dai
X
Xiaolin Liu
F
Fazal Ul Nisa
E
Esha Maqbool
W
Waheed Ahmad
M
Muhammad Iqbal Sabir
D
Dan Lü
I
Iqra Shahbaz
Z
Zeyu Ma
Z
Zhen Peng
Y
Yixin Wang
Y
Yihao Long
贺亮 cover
贺亮 (Liang He) *
DOI:10.1016/j.mattod.2025.11.008delete
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Abstract

Abstract

En 中文
Two-dimensional (2D) materials hold great promise for next-generation optoelectronic devices, yet the scalable production of semiconducting 2D transition metal borides (MBenes) remains a major challenge. In this work, we developed a rapid solid-state exfoliation strategy to directly obtain wide bandgap semiconducting molybdenum boride (SMB) nanosheets from commercial MoB2 powder. The exfoliation process by lithium borohydride (LiBH4)-assisted lithiation and hydrolysis enables efficient exfoliation of bulk MoB2 into few-layer SMB nanosheets of lateral dimensions within minutes, overcoming the intrinsic metallic limitations of conventional MBenes. The synthesized SMB nanosheets were deposited via spray coating onto a flexible polyethylene terephthalate (PET) substrate, followed by mask-assisted sputtering of Au contacts, and a low-power flexible broadband UV–visible (UV–vis) photodetector was fabricated. It exhibits excellent optoelectronic performance with a long-term stability, such as a high on-off ratio of 3.8 × 103@0.1 V, an excellent responsivity (47 A W−1), a high specific detectivity (7.9 × 1011 Jones), and a rapid response/recovery (25 ms/48 ms). Beyond conventional photodetection, the flexible device enables real-time pulse monitoring, photoplethysmography (PPG), and imaging capabilities, underscoring its multifunctionality. This study presents a novel pathway for developing scalable, high-performance, and wearable optoelectronics devices based on 2D metal boride.

Journal

M
Materials Today
IF:
22
Papers:
363
Citations:
0

Organization

C
chinese academy of sciences (iccas)
Scholars:
4
Papers: 2
Citations: 0
B
beijing institute of technology
Scholars:
5.3W
Papers: 3.9W
Citations: 63
S
sichuan university
Scholars:
11.6W
Papers: 7.7W
Citations: 100
S
shandong normal university
Scholars:
1.0W
Papers: 8.2K
Citations: 3
W
Wuhan University of Technology
Scholars:
3.4W
Papers: 2.4W
Citations: 4.4W
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