.png){kind=icon}
.png){kind=icon}
Return
Selenium migration and SiC structural evolution post helium and selenium Co-implantation and annealing
.png){kind=icon}
PRE
AI
DOI：10.1016/j.vacuum.2025.114322.png)
.png){kind=icon}
Original request for help.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
Polycrystalline SiC samples were first implanted with 200 keV selenium (Se) ions at room temperature (RT) to a fluence of 1 x 1016 cm(-2). Thereafter, some of the pre-implanted SiC samples were separately implanted with helium (He) ions of 17 keV to a fluence of 1 x 10(17) cm(-2) at RT and 500 degrees C. The samples were then annealed in a vacuum at 1000 degrees C for 5 h. Raman spectroscopy and transmission electron microscopy (TEM) were used to study the influence of Se and He co-implantation and annealing on the microstructure of SiC. Rutherford backscattering spectrometry (RBS) was used to study the migration behavior of Se in SiC before and after co-implantation and annealing. Implantation of Se at RT amorphized the SiC near the surface implanted region. Co-implantation at RT created a high portion of free carbon atoms in the damaged region accompanied by the formation of He nanobubbles, while co-implantation at 500 degrees C led to some recrystallization of initially amorphous SiC and formation of larger He bubbles. Annealing at 1000 degrees C caused some recrystallization in both as-implanted (SiC implanted with Se only) and co-implanted samples. However, the recrystallization was accompanied by the formation of graphite crystals (with an average size of 10 nm) in the samples co-implanted at RT. This indicates that coimplantation at RT induces more detrimental effects on the physical integrity of SiC. RBS results showed no change in Se distribution in SiC after subsequent implantation with He ions at RT and 500 degrees C. However, annealing at 1000 degrees C caused the Se atoms to migrate towards the bulk of SiC in the co-implanted samples, while no significant migration of Se atoms was observed in the as-implanted samples (SiC implanted with Se only) annealed under the same conditions. This suggests that He assisted Se migration in SiC.
Keywords:
SiC
Co-implantation
Selenium
He-bubbles
Recrystallization
Journal
IF:
3.9
Papers:
1.4W
Citations:
2.5W
Organization
View more organizations