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Self-powered UV-NIR broadband photodetector based on 2D-Bi2Te3/3D-GaN heterojunction for image sensing
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DOI：10.1016/j.mtnano.2026.100833.png)
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Abstract
En 中文
• Electron beam evaporation and post-annealing enable low-cost, high-quality Bi2Te3/GaN heterojunction fabrication. • The Bi2Te3/GaN photodetector achieves a specific detectivity of 2.01×1012 Jones at 0 V. • Built-in field of heterojunction separates photogenerated carriers for self-powered UV-NIR detection. • This device is used as a single-pixel sensor and achieves high-quality multi-wavelength imaging.
Keywords:
Bi2Te3/GaN heterojunction
self-powered photodetector
UV-NIR detection
broadband imaging
2D-3D heterojunction
Journal
IF:
8.2
Papers:
852
Citations:
4.4K