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Self-Rectifying Volatile Memristor for Highly Dynamic Functions
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DOI：10.1002/adfm.202423880.png)
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Abstract
En 中文
In this study, a highly rectifying memristor composed of a Pt/TaOx/TiN stack, incorporating a complementary metal-oxide semiconductor-friendly metal oxide switching layer, is fabricated to assess its performance in a diverse range of applications. The memristor exhibits highly rectifying characteristics due to the Schottky barrier formed by the work function difference between the Pt and TiN electrodes. For a compliance current of 1 mA, the memristor displays volatile memory properties, attributed to the migration of oxygen ions within the TaOx layer. Leveraging this volatile behavior, synaptic functions-where changes in synaptic plasticity occur in response to incoming spikes-are emulated. Additionally, the complete functions of a biological nociceptor are demonstrated, including threshold, relaxation, no-adaptation, sensitization, and recovery. These highly dynamic functions of the memristor are then utilized to mimic neuronal firing with a synaptic array, Morse code implementation enabling data generation, and computing functions through cost-effective reservoir computing. The simplicity of the fabrication process and the broad range of functions implemented in a single memristor make the Pt/TaOx/TiN device a promising candidate for future applications.
Keywords:
artificial sensory system
dynamic memristor
morse code
reservoir computing
synaptic array
Journal
IF:
19
Papers:
3.4W
Citations:
32.1W
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